Light emitting device, manufacturing method for the light emitting device, and lighting module having the light emitting device

ABSTRACT

A light emitting device includes: a first support member having an opening; a second support member disposed in the opening of the first support member; an adhesive member disposed between the first and second support members; a first lead electrode disposed on the second support member; a second lead electrode disposed on at least one of the first and second support members; a light emitting chip disposed on the first lead electrode, the light emitting chip being electrically connected to the second lead electrode; and a conductive layer disposed under the second support member, wherein the first support member includes a resin material, the second support member includes a ceramic material, and the first lead electrode is disposed between the light emitting chip and the second support member.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority under 35 U.S.C. §119(a) ofKorean Patent Application No. 10-2015-0093516 filed on Jun. 30, 2015,which is hereby incorporated by reference in its entirety.

BACKGROUND

1. Field of the Invention

The present disclosure relates to a light emitting device, amanufacturing method for the light emitting device, and a lightingmodule having the light emitting device.

2. Description of Related Art

Light emitting devices include light emitting diodes. The light emittingdiodes are semiconductor devices that convert electrical energy intolight, and have come into the spotlight as a next-generation lightsource that replace fluorescent lamps and incandescent lamps.

The light emitting diodes generate light using semiconductor devices,and thus consume only very low power, as compared with the incandescentlamps that generate light by heating tungsten or the fluorescent lampsthat generate light by allowing ultraviolet light generated throughhigh-pressure discharge to collide with a fluorescent substance.

The light emitting diodes are being increasingly used as light sourcesof lighting devices such as indoor and outdoor lamps, liquid crystaldisplays, electronic boards, and streetlights.

SUMMARY

Embodiments provide a light emitting device having a new heatdissipation structure.

Embodiments provide a light emitting device in which a second supportmember having a light emitting chip disposed thereon is disposed in aninside or opening of a first support member.

Embodiments provide a light emitting device in which a second supportmember having a low thermal resistance is disposed in an inside oropening of a first support member, and a light emitting chip is disposedon the second support member.

Embodiments provide a light emitting device in which a first supportmember and a second support member having a light emitting chip disposedthereon are adhered to each other using an adhesive member.

Embodiments provide a light emitting device in which a first supportmember made of a resin material and a second support member made of aceramic material are adhered to each other using an adhesive member, andone or a plurality of light emitting chips are disposed on the secondsupport member, and a lighting module having the light emitting device.

Embodiments provide a light emitting device in which a lead electrode isdisposed between a second support member and a light emitting chip, anda lighting module having the light emitting device.

Embodiments provide a light emitting device in which a portion of anadhesive layer in a first support member is adhered to a second supportmember, and a manufacturing method for the light emitting device.

In one embodiment, a light emitting device includes: a first supportmember having an opening; a second support member disposed in theopening of the first support member; an adhesive member disposed betweenthe first and second support members; a first lead electrode disposed onthe second support member; a second lead electrode disposed on at leastone of the first and second support members; a light emitting chipdisposed on the first lead electrode, the light emitting chip beingelectrically connected to the second lead electrode; and a conductivelayer disposed under the second support member, wherein the firstsupport member includes a resin material, the second support memberincludes a ceramic material, and the first lead electrode is disposedbetween the light emitting chip and the second support member.

In another embodiment, a lighting module includes: a first supportmember having an opening; a second support member disposed in theopening of the first support member; an adhesive member disposed betweenthe first and second support members; a first lead electrode disposed onthe second support member; a second lead electrode disposed on at leastone of the first and second support members; a plurality of lightemitting chips disposed on the first lead electrode, the light emittingchips being electrically connected to the second lead electrode; aprotective layer disposed on the first and second lead electrodes; and aconductive layer made of a metallic material, the conductive layer beingdisposed under the first and second support members, wherein the firstsupport member includes a resin material, the second support memberincludes a ceramic material, and the plurality of light emitting chipsare disposed between the first lead electrode and the second supportmember.

In still another embodiment, a method for manufacturing a light emittingdevice includes: providing a first support member having an adhesivelayer including an opening therein and an adhesive layer betweendifferent resin layers; inserting a second support member made of aceramic material into the opening of the first support member; if thefirst support member is compressed, allowing a portion of the adhesivelayer to be moved into the opening and adhered to the second supportmember; forming a lead electrode on the first and second lead members;and disposing a light emitting chip on the lead electrode disposed onthe support members, wherein the adhesive layer is disposed at top andbottom edge portions of the second support member, to be adhered to thelead electrode.

The details of one or more embodiments are set forth in the accompanyingdrawings and the description below. Other features will be apparent fromthe description and drawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view showing a light emitting device according to afirst embodiment.

FIG. 2 is a sectional view taken along line A-A of the light emittingdevice of FIG. 1.

FIG. 3 is a view showing another example of the light emitting device ofFIG. 1.

FIG. 4 shows a first modification of the light emitting device of FIG.2.

FIG. 5 shows a second modification of the light emitting device of FIG.2.

FIG. 6 shows a detailed configuration of an adhesive member of each ofthe light emitting devices of FIGS. 2, 4, and 5.

FIG. 7 is a view showing a surface state of a lead electrode located onthe adhesive member in each of the light emitting devices of FIGS. 2, 4,and 5.

FIG. 8 is a view showing a surface state of the lead electrode as thethickness of the adhesive member increases in each of the light emittingdevices of FIGS. 2, 4, and 5.

FIG. 9 shows a first modification of the adhesive member of the lightemitting device of FIG. 5.

FIG. 10 shows a second modification of the adhesive member of the lightemitting device of FIG. 5.

FIG. 11 shows a third modification of the adhesive member of the lightemitting device of FIG. 5.

FIG. 12 shows a fourth modification of the adhesive member of the lightemitting device of FIG. 5.

FIG. 13 shows a fifth modification of the adhesive member of the lightemitting device of FIG. 5.

FIG. 14 shows a sixth modification of the adhesive member of the lightemitting device of FIG. 5.

FIG. 15 shows a seventh modification of the adhesive member of the lightemitting device of FIG. 5.

FIG. 16 shows an eighth modification of the adhesive member of the lightemitting device of FIG. 5.

FIG. 17 shows a ninth modification of the adhesive member of the lightemitting device of FIG. 5.

FIG. 18 is a view showing a lighting module having a light emittingdevice according to a second embodiment.

FIG. 19 is a side sectional view of the lighting module of FIG. 18.

FIG. 20 shows a first modification of the lighting module of FIG. 18.

FIG. 21 shows a second modification of the lighting module of FIG. 18.

FIGS. 22 to 28 are views showing a manufacturing process of the lightemitting device of FIG. 2.

FIG. 29 is a view showing an example of a light emitting chip accordingto an embodiment.

FIG. 30 is a view showing another example of the light emitting chipaccording to the embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

In the following description of the embodiments, it will be understoodthat, when a layer (film), a region, a pattern or a structure isreferred to as being “on” or “under” a substrate, another layer (film),region, pad or patterns, it can be “directly” or “indirectly” on theother layer (film), region, pattern or structure, or one or moreintervening layers may also be present. Such a position of each layerwill be described with reference to the drawings.

Hereinafter, exemplary embodiments will be described in detail withreference to the accompanying drawings. The technical objective ofembodiments is not limited to the aforementioned technical problem, andtechnical problems not mentioned above can be clearly understood by aperson skilled in the art by the disclosure below. In the drawings, likeparts and portions are designated by like reference numerals andoverlapping is avoided with respect to explanation of these parts andportions.

FIG. 1 is a plan view showing a light emitting device according to afirst embodiment. FIG. 2 is a sectional view taken along line A-A of thelight emitting device of FIG. 1.

Referring to FIGS. 1 and 2, the light emitting device 100 includes alight emitting chip 101, a first support member 110 having an opening150, a second support member 131 located in the opening 150 of the firstsupport member 110, the second support member 131 being disposed underthe light emitting chip 101, a first lead electrode 161 disposed betweenthe second support member 131 and the light emitting chip 101, a secondlead electrode 163 disposed on at least one of the first and secondsupport members 110 and 131, and a conductive layer 165 disposed underthe first and second support members 110 and 131.

The light emitting chip 101 may selectively emit light in the range froma visible ray band to an ultraviolet (UV) band. The light emitting chip101 may include, for example, at least one of a UV LED, a red LED, ablue LED, a green LED, a yellow green LED, and a white LED.

The light emitting chip 101 may include at least one of the structure ofa horizontal chip, in which two electrodes in the chip are disposedadjacent to each other and the structure of a vertical chip, in whichtwo electrodes in the chip are disposed at sides opposite to each other.

When the light emitting chip 101 is a vertical chip, the light emittingchip 101 may be connected to the first lead electrode 161 and connectedto the second lead electrode 163 through a wire 105. As another example,when the light emitting chip 101 is a horizontal chip, the lightemitting chip 101 may be connected to the first and second leadelectrodes 161 and 163 through the wire 105, but the present disclosureis not limited thereto. When the light emitting chip 101 is mounted in aflip-chip manner, the light emitting chip 101 may be flip-bonded on thefirst and second lead electrodes 161 and 163.

The first support member 110 includes a resin material, and the secondsupport member 131 includes a nonmetallic or ceramic material. The firstsupport member 110 may be a resin substrate or an insulating substrate,and the second support member 131 may be a ceramic substrate or a heatdissipation substrate.

The first support member 110 may include a resin material, e.g., atleast one of a fluororesin (FR)-based material and a composite epoxymaterial (CEM). The light emitting device 100 according to theembodiment uses the first support member 110, so that it is possible tosave manufacturing cost and material cost of the light emitting device100 and to reduce the weight of the light emitting device 100.

The second support member 131 may include a material having a higherthermal conductivity and a lower heat resistance than the resinmaterial. The second support member 131 may be made of, for example,oxide, carbide, or nitride formed by bonding a metal element such assilicon (Si), aluminum (Al), titanium (Ti), or zirconium (Zr) to oxygen,carbon, or nitrogen. The second support member 131 may include analuminum nitride (AlN) material. As another example, the second supportmember 131 may include at least one of silicon carbide (SiC), alumina(Al₂O₃), zirconium oxide (ZrO₂), silicon nitride (Si₃N₄), and boronnitride (BN) materials. The thermal conductivity of AlN may be 70 to 250W/mK, the terminal conductivity of BN may be 60 to 200 W/mK, the thermalconductivity of Si₃N₄ may be 60 to 90 W/mk, the thermal conductivity ofSi may be 150 W/mK, the thermal conductivity of SiC may be 270 W/mK, andthe thermal conductivities of Al₂O₃ and ZrO₂ may be 20 to 30 W/mK. Thesecond support member 131 may include a material having a thermalconductivity of 60 W/mK or more.

The first support member 110 includes the opening 150 as shown in FIG.2. The top-view shape of the opening 150 may include at least one of apolygonal shape and a circular or elliptical shape. The second supportmember 131 may be disposed in the opening 150. Accordingly, it ispossible to decrease the thickness of the light emitting device 100 andto ensure a heat dissipation path. The second support member 131 isdisposed inside the first support member 110, and therefore, the firstand second support members 110 and 130 may not be stacked.

As shown in FIG. 1, the lateral and longitudinal lengths Y2 and X2 ofthe second support member 131 may be smaller than the lateral andlongitudinal lengths of the opening 150, respectively. The lateral andlongitudinal lengths Y2 and X2 of the second support member 131 may besmaller than the lateral and longitudinal lengths Y1 and X1 of the firstsupport member 110, respectively. Accordingly, the first support member110 can face the second support member 131 at the circumference of thesecond support member 131. The first support member 110 surrounds thesecond support member 131.

As another example, when the longitudinal length of the opening 150 isequal to or smaller than the longitudinal length X3 of the secondsupport member 131 as shown in FIG. 3, two sides of the second supportmember 131 may not face the first support member 110. Hereinafter, forconvenience of illustration, the structure in which the second supportmember 131 is inserted into the opening 150 as shown in FIG. 1 will bedescribed.

Referring to FIG. 2, the first support member 110 the first supportmember 110 may include at least one resin layer 111 and 113, and a metallayer 118 and 119 disposed on at least one of top and bottom surfaces ofthe resin layer 111 and 113. The resin layer 111 and 113 may be formedin a single layer or multiple layers. The resin layer 111 and 113 may beformed in multiple layers, and may include, for example, a first resinlayer 111 and a second resin layer 113 disposed under the first resinlayer 111. The first and second resin layers 11 and 113 may be spacedapart from each other or may be adhered to each other by an adhesivemember. The metal layer 118 and 119 may be formed in a single layer ormultiple layers. The metal layer 118 and 119 may be formed in multiplelayers, and may include a first metal layer 118 disposed on a topsurface of the first resin layer 111 and a second metal layer 119disposed on a bottom surface of the second resin layer 113. Each of thefirst and second metal layers 118 and 119 may be formed in a singlelayer or multiple layers.

The first and second resin layers 111 and 113 may include the same resinmaterial, e.g., an FR-based material and a CEM. The first and secondmetal layers 118 and 119 may be formed of at least one selected from thegroup consisting of titanium (Ti), palladium (Pd), copper (Cu), nickel(Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn),silver (Ag), and phosphorus (P), or a selective alloy thereof.

The first metal layer 118 may be selectively disposed at a portion orthe whole of a top surface of the first support member 110 depending ona pattern shape, but the present disclosure is not limited thereto. Thefirst metal layer 118 may be divided into electrode patterns P3 and P4selectively connected to the different lead electrodes 161 and 163. Thesecond metal layer 119 may be selectively disposed at a portion or thewhole of a bottom surface of the first support member 110 depending on apattern shape, but the present disclosure is not limited thereto.

The first support member 110 may include an adhesive layer 115 betweenthe first and second resin layers 111 and 113, and the adhesive layer115 allows the first and second resin layers 111 and 113 to be adheredto each other therethrough. The adhesive layer 115 may include at leastone of silicon, epoxy, and prepreg. When the first and second layers 111and 113 are formed as a single layer, the adhesive layer 115 may beremoved, but the present disclosure is not limited thereto.

Meanwhile, a metal layer 138 and 139 may be formed on at least one oftop and bottom surfaces of the second support member 131. The metallayer 138 and 139 includes a third metal layer 138 disposed on the topsurface of the second support member 131 and a fourth metal layer 139disposed on the bottom surface of the second support member 131.

The third and fourth metal layers 138 and 139 may be formed of at leastone selected from the group consisting of titanium (Ti), palladium (Pd),copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta),platinum (Pt), tin (Sn), silver (Ag), and phosphorus (P), or a selectivealloy thereof. Each of the third and fourth metal layers 138 and 139 maybe formed in a single layer or multiple layers. The second supportmember 131 having the third and fourth metal layers 138 and 139 may bedefined as a ceramic substrate or a heat dissipation substrate.

The third metal layer 138 may be spaced apart from a top edge of thesecond support member 131. The third metal layer 138 may be divided intoat least two electrode patterns P1 and P2. The at least two patterns P1and P2 contact the second support member 131 on the second supportmember 131, and may be electrically connected to the light emitting chip101. The at least two electrode patterns P1 and P2 may be divided by agap 109, but the present disclosure is not limited thereto. The shape ofthe gap 109 may include at least one of a linear shape, a bent shape,and a curved shape.

The at least two electrode patterns P1 and P2 include a first electrodepattern P1 and a second electrode pattern P2, and the first electrodepattern P1 may be disposed between the light emitting chip 101 and thesecond support member 131. The first electrode pattern P1 may bedisposed between the first lead electrode 161 and the second supportmember 131, and the second electrode pattern P2 may be disposed betweenthe second lead electrode 163 and the second support member 131.

The first and second electrode patterns P1 and P2 may be spaced apartfrom the top edge of the second support member 131. If the first andsecond electrode patterns P1 and P2 exist at the top edge, the first andsecond electrode patterns P1 and P2 may be connected to each other alongthe top edge as shown in FIG. 1, and therefore, an electrical shortcircuit may occur.

The fourth metal layer 139 may be spaced apart from a bottom edge of thesecond support member 131. When the fourth metal layer 139 is anelectrical wire, the fourth metal layer 139 may be spaced apart from thebottom edge of the second support member 131 so as to prevent electricalinterference therebetween. Accordingly, although electrical patternsusing the fourth metal layer 139 of the second support member 131 aredesigned, it is possible to prevent an electrical short.

The bottom area of the third metal layer 138 may be smaller than the toparea of the second support member 131. The top area of the fourth metallayer 139 may be smaller than the bottom area of the second supportmember 131. Accordingly, edge portions of the third and fourth metallayers 138 and 139 can be spaced apart from the first support member110.

The thickness B1 of the first support member B1 may be equal to orthicker than the thickness B2 of the second support member 131. The sumof the thicknesses of the second support member 131 and the third andfourth metal layers 138 and 139 may be equal to the thickness B1 of thefirst support member 110, but the present disclosure is not limitedthereto. The thickness B2 of the second support member 131 is formedthicker than the sum of the thicknesses of the first and second resinlayers 111 and 113, and thus a sufficient heat dissipation surface areacan be provided.

Meanwhile, the adhesive member 151 is disposed between the first andsecond support members 110 and 131. The adhesive member 151 is adheredto the first and second support members 110 and 131 while being disposedin the opening 151 of the first support member 110. The adhesive member151 may contact the first and second resin layers 111 and 113 and theadhesive layer 115. The adhesive member 151 supports the second supportmember 131 while being disposed in the opening 150 of the first support.

An upper portion of the adhesive member 151 may be disposed between thefirst and third metal layers 118 and 138. The upper portion of theadhesive member 151 may be disposed at a height equal to or lower thanthat of the top surface of the first support member 110. If the upperportion of the adhesive member 151 is disposed at a height higher thanthat of the top surface of the first support member 110, surfaces of thelead electrodes 161 and 163 may be formed to be rough.

A lower portion of the adhesive member 151 may be disposed between thesecond and fourth metal layers 119 and 139. The lower portion of theadhesive member 151 may be disposed at a height equal to or higher thanthat of the bottom surface of the first support member 110. If the lowerportion of the adhesive member 151 is further protruded than the bottomsurface of the first support member 110, a surface of the conductivelayer 165 may be formed to be rough.

The adhesive member 151 may be disposed on at least one of the top andbottom surfaces of at least one of the first and second support members110 and 131. The adhesive member 151 may include any one or both of afirst adhesive part 153 disposed at a top edge portion of the secondsupport member 131 and a second adhesive part 155 disposed at a bottomedge portion of the second support member 131. The first and secondadhesive parts 153 and 155 may extend or protrude from the adhesivemember 151.

The first adhesive part 153 is adhered to the top circumference of thesecond support member 131, and may be disposed under the circumferenceof the third metal layer 138 and the lead electrodes 161 and 163. Thefirst adhesive part 153 may be adhered to the second support member 131and the lead electrodes 161 and 163.

The first adhesive part 153 may also be exposed on the gap 109 as shownin FIG. 1, but the present disclosure is not limited thereto. Thethickness of the first adhesive part 153 may be equal to or thinner thanthat of the third metal layer 138. When the thickness of the firstadhesive part 153 is thicker than that of the third metal layer 138, thesurfaces of the lead electrodes 161 and 163 are not uniform.

The second adhesive part 155 is adhered to the bottom circumference ofthe second support member 131, and may be disposed at the circumferenceof the fourth metal layer 139. The thickness of the second adhesive part155 may be equal to or thinner than that of the fourth metal layer 139.When the thickness of the second adhesive part 155 is thicker than thatof the fourth metal layer 139, the surface of the conductive layer 165disposed under the second adhesive part 155 is not uniform. The secondadhesive part 155 may be adhered to the second support member 131 andthe conductive layer 165.

The adhesive member 151 may be made of the same material as the adhesivelayer 115, and may include, for example, at least one of silicon, epoxy,and prepreg. As another example, the adhesive member 151 may be formedof a different material from the adhesive layer 115 among theabove-described materials.

Meanwhile, the first lead electrode 161 is disposed on the secondsupport member 131, and a portion of the first lead electrode 161 mayextend on a second region of the first support member 110, e.g., thethird electrode pattern P3 of the first metal layer 118.

The second lead electrode 163 may be disposed on a first region of thefirst support member 110, e.g., the fourth electrode pattern P4 of thefirst metal layer 118, and a portion of the second lead electrode 163may extend on the second electrode pattern P2 of the second supportmember 131. The first and second regions of the first support member 110may be different regions from each other.

The first lead electrode 161 may be connected to the first electrodepattern P1 of the third metal layer 138 and the third electrode patternP3 of the first metal layer 118. The first lead electrode 161 may bedisposed to vertically overlap with the second support member 131, theadhesive member 151, and the second region of the first support member110.

Here, the light emitting chip 101 vertically overlap with the first leadelectrode 161 and the second support member 131, and may be bonded tothe first lead electrode 161 using a bonding material. When the lightemitting chip 101 is bonded to the first lead electrode 161, the bondingmaterial includes a conductive material, e.g., a solder material. Whenan electrical connection between the light emitting chip 101 and thefirst lead electrode 161 is not required, the bonding material may be aninsulative material, e.g., a silicon or epoxy material.

The second lead electrode 163 may be disposed on the first region of thefirst support member 110, the adhesive member 151, and the secondsupport member 131. The second lead electrode 163 may be connected tothe second electrode pattern P2 of the third metal layer 138 and thefourth electrode pattern P4 of the first metal layer 118.

The first and second lead electrodes 161 and 163 are pads and mayinclude a different metal from the first to fourth metal layers 118,119, 138, and 139. For example, each of the first and second leadelectrodes 161 and 163 may be formed in a single layer or multiplelayers using at least one selected from the group consisting of titanium(Ti), palladium (Pd), copper (Cu), nickel (Ni), gold (Au), chromium(Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), andphosphorus (P), or a selective alloy thereof.

A protective layer (not shown) for surface protection may be disposed onthe first and second lead electrodes 161 and 163. The protective layermay include a solder resist material.

Meanwhile, the conductive layer 165 is disposed under the second supportmember 131. The conductive layer 165 dissipates, under the secondsupport member 131, heat conducted from the second support member 131.The conductive layer 165 may extend under the first support member 110.The conductive layer 165 may be disposed under the second and fourthmetal layers 119 and 139. The conductive layer 165 is disposed such thatits lateral or longitudinal width is wider than the lateral orlongitudinal width of the second support member 131, thereby diffusingthe conducted heat. A portion of the conductive layer 165 may verticallyoverlap with the adhesive member 151.

The conductive layer 165 may include a different metal from the first tofourth metal layers 118, 119, 138, and 139. For example, the conductivelayer 165 may be formed in a single layer or multiple layers using atleast one selected from the group consisting of titanium (Ti), palladium(Pd), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta),platinum (Pt), tin (Sn), silver (Ag), and phosphorus (P), or a selectivealloy thereof. The conductive layer 165 may include the same metal asthe first and second lead electrodes 161 and 163, but the presentdisclosure is not limited thereto.

The light emitting chip 101 is connected to the first and second leadelectrodes 161 and 163. The light emitting chip 101 may be bonded to thefirst lead electrode 161 using a conductive adhesive, and may beconnected to the second lead electrode 163 through the wire 105. Thelight emitting chip 101 is driven by receiving power supplied from thefirst and second lead electrodes 161 and 163, to emit light. Heatgenerated from the light emitting chip 101 may be conducted to the firstlead electrode 161, the second support member 131, and the conductivelayer 165.

According to an embodiment, the light emitting chip 101 may be disposedin one or plurality on the second support member 131, but the presentdisclosure is not limited thereto. The plurality of light emitting chips101 may be connected in series or parallel, but the present disclosureis not limited thereto.

The light emitting device 100 according to the embodiment may exclude amaterial, e.g., an insulative adhesive, which increases heat resistancebetween the light emitting chip 101 and the second support member 131 ina region in which the light emitting chip 101 is disposed. In the lightemitting device 100 according to the embodiment, the second supportmember 131 made of a ceramic material is disposed in the region in whichthe light emitting chip 101 is disposed, thereby improving heatdissipation efficiency. In the light emitting device 100 according tothe embodiment, the first support member 110 made of a resin material isdisposed at the circumference of the second support member 131, so thatan electrical connection to the rear face of the first support member110 can be easily made through a circuit pattern or via hole on thefirst support member 110. In addition, other control parts may befurther disposed on the first support member 110.

FIG. 4 shows a first modification of the light emitting device of FIG.2. In FIG. 4, components identical to the above-described componentsrefer to the above-described components and their descriptions.

Referring to FIG. 4, the light emitting device includes a light emittingchip 101, a first support member 110 having an opening 150, a secondsupport member 131 located in the opening 150 of the first supportmember 110, the second support member 131 being disposed under the lightemitting chip 101, a first lead electrode 161 disposed between thesecond support member 131 and the light emitting chip 101, a second leadelectrode 163 disposed on at least one of the first and second supportmembers 110 and 131, a conductive layer 165 disposed under the first andsecond support members 110 and 131, and a light transmission layer 171disposed over the light emitting chip 101.

The light transmission layer 171 may be disposed on surfaces of thelight emitting chip 101, e.g., side and top surfaces of the lightemitting chip 101. The light transmission layer 171 may include a resinmaterial such as silicon or epoxy.

A top surface of the light transmission layer 171 may be located at aposition higher than the height of the highest point of a wire 105, butthe present disclosure is not limited thereto. The light transmissionlayer 171 may include an impurity such as a fluorescent substance, adispersing agent, or a scattering agent, but the present disclosure isnot limited thereto.

The light transmission layer 171 may vertically overlap with the secondsupport member 131, and a portion of the light transmission layer 171may be formed in a gap 109 between the first and second lead electrodes161 and 163. The light transmission layer 171 may be disposed over thesecond support member 131 and the first support member 110, but thepresent disclosure is not limited thereto.

FIG. 5 shows a second modification of the light emitting device of FIG.2. In FIG. 5, components identical to the above-described componentsrefer to the above-described components and their descriptions.

Referring to FIG. 5, the light emitting device includes a light emittingchip 101, a first support member 110 having an opening 150, a secondsupport member 131 located in the opening 150 of the first supportmember 110, the second support member 131 being disposed under the lightemitting chip 101, a first lead electrode 161 disposed between thesecond support member 131 and the light emitting chip 101, a second leadelectrode 163 disposed on at least one of the first and second supportmembers 110 and 131, a conductive layer 165 disposed under the first andsecond support members 110 and 131, a fluorescent substance layer 173disposed on the light emitting chip 101, and a reflecting member 175disposed at the circumferential of the light emitting chip 101.

The fluorescent substance layer 173 is disposed on a top surface of thelight emitting chip 101. The fluorescent substance layer 173 may befurther formed on side surfaces of the light emitting chip 101, but thepresent disclosure is not limited thereto.

The fluorescent substance layer 173 converts wavelengths of a portion oflight emitted from the light emitting chip 101. The fluorescentsubstance layer 173 includes a fluorescent substance in a silicon orepoxy resin. The fluorescent substance may include at least one of red,green, blue, and yellow fluorescent substances, but the presentdisclosure is not limited thereto. The fluorescent substance may beformed of, for example, one selected from the group consisting of YAG,TAG, silicate, nitride, and oxy-nitride-based materials.

The reflecting member 175 may be disposed at the circumference of thelight emitting chip 101 and the fluorescent substance layer 173. Thereflecting member 175 reflects light incident from the light emittingchip 101, so that light is extracted through the fluorescent substancelayer 173.

The reflecting member 175 may include a nonmetallic or insulativematerial, and may be formed of, for example, a resin material such assilicon or epoxy. The reflecting member 175 may include an impurityhaving a refractive index higher than that of the resin material. Atleast one of compounds, such as oxide, nitride, fluoride, and sulfide,having at least one of Al, Cr, Si, Ti, Zn, and Zr, may be added to thereflecting member 175.

A top surface of the reflecting member 175 may be located at a positionhigher than the height of the highest point of a wire 105. Accordingly,the reflecting member 175 can protect the wire 105.

The reflecting member 175 may be disposed to vertically overlap with thesecond support member 131, and may contact the first and second leadelectrodes 161 and 163. The reflecting member 175 can dissipate heatfrom its surfaces through thermal conduction performed by the impurity.

According to an embodiment, an optical lens may be disposed on one or aplurality of light emitting chips 101, but the present disclosure is notlimited thereto.

FIG. 6 shows a detailed configuration of an adhesive member of each ofthe light emitting devices of FIGS. 2, 4, and 5. FIG. 7 is a viewshowing a surface state of a lead electrode located on the adhesivemember in each of the light emitting devices of FIGS. 2, 4, and 5. FIG.8 is a view showing a surface state of the lead electrode as thethickness of the adhesive member increases in each of the light emittingdevices of FIGS. 2, 4, and 5.

In the light emitting device according to the embodiment, a concave part160 or 160A may be formed in the lead electrode 163 as shown in FIG. 7or 8 depending on a thickness D1 of the adhesive member 151 disposedbetween the first and second support members 110 and 131 as shown inFIG. 6. If the concave part 160A of the lead electrode 163 is formeddeeper as shown in FIG. 8, the lead electrode 163 may be open-circuited.

The thickness D1 of the adhesive member 151 may be equal to or smallerthan 300 μm, e.g., in a range of 25 μm to 200 μm. When the thickness D1of the adhesive member 151 is in the range of 25 μm to 200 μm, a fineconcave part 160 may formed in the surface of the lead electrode 163 asshown in FIG. 7. The depth T2 of the concave part 160 is formed to beequal to or smaller than ⅓ of the thickness T1 of the lead electrode163, and therefore, a failure that the lead electrode 163 isopen-circuited may not occur.

If the thickness of the adhesive member 151 is less than 25 μm, anystress relief is not made in the direction of the adhesive member 151,and therefore, cracks may be generated in the second support member 131in a thermal impact test. When the thickness D4 of the adhesive member151 exceeds 300 μm as shown in FIG. 8, it is difficult to performsurface metal processing, and the lead electrode 163 on the adhesivemember 151 has the concave part 160A caving in to a deep depth T3.Therefore, a failure that the lead electrode 163 is open-circuited.

Due to the first adhesive part 153 of the adhesive member 151, it ispossible to prevent an electrical short circuit between the electrodepatterns P1 and P2 at the top edge of the second support member 131. Thefirst adhesive part 153 may have a width D3 that is equal to or greaterthan 50 μm, e.g., in a range of 50 μm to 150 μm. When the width D3 ofthe first adhesive part 153 is smaller than the range, electricalinterference may occur between the adjacent patterns P1 and P2. When thewidth D3 of the first adhesive part 153 is greater than the range, thefirst adhesive part 153 may have influence on the surfaces of the leadelectrodes 161 and 163.

When electrode patterns are formed on the bottom surface of the secondsupport member 131, the second adhesive part 155 can prevent anelectrical short-circuit between the electrode patterns on the bottomsurface of the second support member 131. The width D2 of the secondadhesive part 155 may be formed equal to or wider than the width D3 ofthe first adhesive part 153, and the second adhesive part 155 may have awidth that is equal to or greater than 50 μm, e.g., in a range of 70 μmto 200 μm. When the width D2 of the second adhesive part 155 is smallerthan the range, electrical interference may occur between the adjacentpatterns P1 and P2. When the width D2 of the second adhesive part 155 isgreater than the range, the second adhesive part 155 may have influenceon the surface of the conductive layer 165.

FIGS. 9 to 17 are other modifications of the light emitting device ofFIG. 2. In FIGS. 9 to 17, components identical to the above-describedcomponents refer to the above-described components and theirdescriptions, and their detailed descriptions will be omitted.

Referring to FIG. 9, an adhesive member 151 is disposed between a firstsupport member 110 and a second support member 131, and includes a firstadhesive part 153. The first adhesive part 153 is adhered to a top edgeportion of the second support member 131, and is disposed between athird metal layer 138 and a first metal layer 118. The first adhesivepart 153 can prevent first and second electrode patterns P1 and P2 frombeing connected to each other through a region of a gap 109.

The adhesive member 151 does not include a second adhesive part, and alower portion of the adhesive member 151 may be disposed between asecond metal layer 119 and a fourth metal layer 139. In this case, whena conductive layer 165 is not a power supply layer, the fourth metallayer 139 extends up to a region of the second adhesive part, and thusthe thermal conduction efficiency caused by the fourth metal layer 139can be improved.

Referring to FIG. 10, an adhesive member 151 has a structure including asecond adhesive part 155 without any first adhesive part. When aconductive layer 165 is a power supply layer, the second adhesive part155 can prevent an electrical short circuit between electrode patternsof a fourth metal layer 139 at a bottom edge portion of a second supportmember 131.

An upper portion of the adhesive member 151 may be disposed between athird metal layer 138 and a first metal layer 118, and a gap 109 maydivide the third metal layer 138 into a first pattern P1 and a secondpattern P2 on the second support member 131. Accordingly, although thefirst adhesive part of the adhesive member 151 is removed, the gap 109can prevent an electrical short circuit on the second support member131.

Referring to FIG. 11, a second support member 131 includes at least oneof a first recess 6A disposed at a top edge thereof and a second recess6B disposed at a bottom edge thereof. The first recess 6A may bedisposed along the top edge of the second support member 131, and may beformed to be stepped from a top surface of the second support member131. The second recess 6B may be formed along the bottom edge of thesecond support member 131, and may be formed to be stepped from a bottomsurface of the second support member 131.

An adhesive member 151 is disposed between a first support member 110and the second support member 131. A first adhesive part 154 may bedisposed in the first recess 6A, and a second adhesive part 155 may bedisposed in the second recess 6B.

The first adhesive part 154 may be disposed between a third metal layer138 and a first metal layer 118, and the second adhesive part 155 may bedisposed between a second metal layer 119 and a fourth metal layer 139.The first adhesive part 154 may have an increased adhesion area, andthus it is possible to prevent the occurrence of a short circuit on atop surface of the second support member 131.

The width of the first and second recesses 6A and 6B may be equal tothat of the first and second adhesive parts 154 and 155, and may be, forexample, in a range of 25 μm to 300 μm. By using the width of the firstand second recesses 6A and 6B, it is possible to prevent interferencebetween adjacent electrode patterns.

Referring to FIG. 12, a second support member 131 includes a firstrecess 6A disposed at an upper circumference thereof, and a secondrecess disposed at a lower circumference of the second support member131 may be omitted. A first adhesive part 153 is disposed in the firstrecess 6A, and thus it is possible to prevent the occurrence of a shortcircuit at an upper portion of the second support member 131. Further,it is possible to improve the adhesion area between lead electrodes 161and 163.

Referring to FIG. 13, a second recess 6B is disposed at a lowercircumference of a second support member 131, and a first recessdisposed at an upper circumference of the second support member 131 maybe omitted. A second adhesive part 155 is disposed in the second recess6B, and thus it is possible to prevent the occurrence of a short circuitat a lower portion of the second support member 131. Further, it ispossible to improve the adhesion area with a conductive layer 165.

Referring to FIG. 14, an adhesive member 151 is disposed between firstand second support members 110 and 131 in an opening 150 of the firstsupport member 110. An upper portion of the adhesive member 151 may bedisposed in a region between first and third metal layers 118 and 138and under first and second lead electrodes 161 and 163. The upperportion of the adhesive member 151 does not include any separateadhesive part, and thus a gap 109 can separate electrode patterns P1 andP2 of the third metal layer 138 from each other.

A lower portion of the adhesive member 151 may be disposed in a regionbetween second and fourth metal layers 119 and 139 and on a conductivelayer 165.

Referring to FIG. 15, an adhesive member 151 is adhered between firstand second support members 110 and 131, and a first recess 6A isdisposed at an upper circumference of the second support member 131. Afirst adhesive part 154 of the adhesive member 151 may be disposed inthe first recess 6A. A second recess 6B is disposed at a lowercircumference of the second support member 131, and a second adhesivepart 156 of the adhesive member 151 may be disposed in the second recess6B. A protruding part 15 is disposed between the first and secondrecesses 6A and 6B.

Here, unlike FIG. 11, the adhesive member 151 may not protrude upward ofa top surface of the second support member 131 and downward of a bottomsurface of the second support member 131. Accordingly, projections 3Aand 3B of first and second lead electrodes 161 and 163 protrude to aregion between first and third metal layers 118 and 138 to be adhered tothe first adhesive part 154. Projections 5A and 5B of a conductive layer165 protrude to a region between second and fourth metal layers 119 and139 to be adhered to the second adhesive part 156. In the light emittingdevice, although the first adhesive part 154 does not protrude upward ofthe top surface of the second support member 131, it is possible toprevent an electrical short circuit caused by a gap 109.

Referring to FIG. 16, an adhesive member 151 may be disposed betweenfirst and second support members 110 and 131. A groove 16 depressedinward of a side surface of the second support member 131, and aprotruding part 152 of the adhesive member 151 may be disposed in thegroove 16. The depth of the groove 16 may be formed within a range inwhich heat dissipation efficiency is not degraded and the strength ofthe second support member 131 is not degraded.

An upper portion of the adhesive member 151 may protrude upward of a topsurface of the second support member 131, and a lower portion of theadhesive member 151 may protrude downward of a bottom surface of thesecond support member 131.

Referring to FIG. 17, an adhesive member 151 is disposed between firstand second support members 110 and 131, and may include at least one orboth of a first adhesive part 153A extending to a top inside of thefirst support member 131 and a second adhesive part 155A extending to abottom inside of the first support member 131. The first adhesive part153A may extend to a region adjacent to an opening in a top surface ofthe first support member 110, to be disposed between first and thirdmetal layers 118 and 138. The second adhesive part 155A may extend to aregion adjacent to the opening 150 in a bottom surface of the firstsupport member 131, to be disposed between second and fourth metallayers 119 and 139.

In the light emitting device, the first and second adhesive parts 153Aand 155A of the adhesive member 151 are not disposed on the secondsupport member 131 but disposed on the first support member 110, therebyimproving the heat dissipation surface area of the second support member131.

The third metal layer 138 on the second support member 131 may bedivided into predetermined electrode patterns P1 and P2 by a gap 109.Accordingly, it is possible to prevent the occurrence of a short circuitbetween the electrode patterns P1 and P2 on the second support member131.

FIG. 18 is a view showing a lighting module having a light emittingdevice according to a second embodiment. FIG. 19 is a sectional viewtaken along line B-B of the lighting module of FIG. 18. In FIGS. 18 and19, components identical to the above-described components refer to theabove-described components and their descriptions.

Referring to FIGS. 18 and 19, the lighting module 100A includes aplurality of light emitting chips 101, a first support member 110 havingan opening 150, a second support member 131 located in the opening 150of the first support member 110, the second support member 131 beingdisposed under the light emitting chips 101, a first lead electrode 161disposed on the second support member 131, the first lead electrode 161being connected to the light emitting chips 101, a second lead electrode163 disposed on at least one of the first and second support members 110and 131, and a conductive layer 165 disposed under the first and secondsupport members 110 and 131. According to an embodiment, an optical lensmay be disposed over the plurality of light emitting chips 101, but thepresent disclosure is not limited thereto.

The first and second support members 110 and 131 may be formed of thesame material as the above-described material.

An adhesive member 151 is disposed between the first and second supportmembers 110 and 131, and may allow the first and second support members110 and 131 to be adhered to each other therethrough.

A first metal layer 118 may be disposed on a top surface of the firstsupport member 110, and a second metal layer 119 may be disposed on abottom surface of the first support member 110. Each of the first andsecond metal layers 118 and 119 may be divided into one or a pluralityof regions as one or plurality of electrode patterns.

A plurality of electrode patterns P1 and P2 may be disposed on thesecond support member 131 depending on a pattern shape of a third metallayer 138. The light emitting chips 101 may be respectively disposed onfirst electrode patterns P1 among the plurality of electrode patterns P1and P2, and the first electrode patterns P1 may be electricallyconnected to the respective light emitting chips 101. A second electrodepattern P2 among the plurality of electrode patterns P1 and P2 may beconnected to any one of the first electrode patterns P1 through a wire105. The plurality of light emitting chips 101 may be connected inseries or parallel by the plurality of electrode patterns P1 and P2 onthe second support member 131.

The first lead electrode 161 disposed on the second support member 131may extend on a second region of the first support member 110. Thesecond lead electrode 163 may extend from a first region of the firstsupport member 110 to the top surface of the first support member 110.The first and second lead electrodes 161 and 163 may be selectivelyconnected to the electrode patterns P1 and P2.

Electrode terminals 191 and 193 may be formed on the first supportmember 110, and at least one hole 181 or at least one via hole 183 maybe disposed in a predetermined region.

A conductive layer 165 is disposed under the second support member 131.The conductive layer 165 may extend under the first support member 110.The conductive layer 165 dissipates heat conducted from the secondsupport member 131.

A protective layer 188 may be formed on the first and second leadelectrodes 161 and 163. The protective layer 188 protects the first andsecond lead electrodes 161 and 163, and may be formed of a solder resistmaterial.

FIGS. 20 and 21 show other examples of the lighting module of FIG. 19.

Referring to FIG. 20, a lighting module further includes a lower heatdissipation plate 210. The heat dissipation plate 210 may be connectedto a conductive layer 165 disposed under first and second supportmembers 110 and 131. The heat dissipation plate 210 includes an upperplate 211 and lower heat dissipation fins 213. The upper plate 213 maybe adhered to the conductive layer 165 using an adhesive, or may befastened to a fastening member 205 through a hole 181 of the firstsupport member 110.

A connector terminal 207 is inserted into a via hole 183 to beconnected, and the connector 201 may be electrically connected to thesecond lead electrode 163.

A fluorescent substance layer 173 is disposed on a light emitting chip101. The fluorescent substance layer 173 converts wavelengths of aportion of light emitted from the light emitting chip 101. A reflectingmember 175 may be disposed at the circumference of the light emittingchip 101. The reflecting member 175 reflects light emitted in the sidedirection of the light emitting chip 101 to be extracted through thefluorescent substance layer 173.

Referring to FIG. 21, a lighting module may include control parts 201disposed on at least one of first and second lead electrodes 161 and 163of a first support member 110. The control parts 201 may be passive oractive elements for controlling the driving of a plurality of lightemitting chips 101, but the present disclosure is not limited thereto.

A protecting member 220 may be disposed over the control parts 201. Theprotecting member 220 may include an insulative material, e.g., an epoxyor silicon material.

A connector 202 may be connected to the lighting module, but the presentdisclosure is not limited thereto.

FIGS. 22 to 28 are views showing a manufacturing process of the lightemitting device of FIG. 2.

Referring to FIGS. 22 and 23, an opening 150A is formed in a first resinsubstrate 110A, an adhesive layer 115, and a second resin substrate110B, and the first resin substrate 110A, the adhesive layer 115, andthe second resin substrate 110B are then aligned. The first resinsubstrate 110A may include a first resin layer 111 and a first metallayer 118 disposed on the first resin layer 111. The second resinsubstrate 110B may include a second resin layer 113 and a second metallayer 119 disposed under the second resin layer 113.

The adhesive layer 115 is located between the first and second resinsubstrates 110A and 110B, and the first and second resin substrates 110Aand 110B are then adhered to each other through the adhesive layer 115.Accordingly, the first and second resin substrates 110A and 110B can beformed as a first support member 110 as shown in FIG. 24.

In addition, a second support member 131 is located and then insertedinto the opening 150A. The second support member 131 includes a ceramicmaterial, and a metal layer 138 and 139 may be disposed on at least oneof top and bottom surfaces of the second support member 131. The metallayer 138 and 139 of the second support member 131 may include electrodepatterns, but the present disclosure is not limited thereto.

Top and bottom edge portions R1 and R2 of the second support member 131may be regions in which third and fourth metal layers 138 and 139 arenot formed, respectively, but the present disclosure is not limitedthereto.

If the second support member 131 is disposed in the opening 150A of thefirst support member 110 as shown in FIG. 24, the top/bottom of thefirst and second support members 110 and 131 are compressed usingtop/bottom compression plates 251 and 156, respectively, as shown inFIG. 25.

At this time, the adhesive layer 115 disposed between the first andsecond resin layers 111 and 113 is compressed, to move into the opening150, as shown in FIG. 25. An adhesive material moved into the opening150 adheres, as an adhesive member 151, the first and second supportmembers 110 and 131 to each other.

The adhesive member 151 extends to the top and bottom edge portions ofthe second support member 131, to form first and second adhesiveportions 153 and 155.

Referring to FIG. 26, a lead electrode 161A and a conductive layer 165are respectively formed on top and bottoms surfaces of the first andsecond support members 110 and 131 through a plating process. The leadelectrode 161A may be formed in the entire region of the top surfaces ofthe first and second support members 110 and 131, or may be selectivelyformed on the top surfaces of the first and second support members 110and 131.

Here, a hole or a via hole may be formed in the first support member 110before the plate processing, but the present disclosure is not limitedthereto.

Referring to FIGS. 26 and 27, in order to form patterns, the leadelectrode 161A is etched, to form a gap 109, thereby dividing the leadelectrode 161 into a plurality of lead electrodes 161 and 163. Also, theconductive layer 165 may be etched in a required pattern shape throughan etching process, but the present disclosure is not limited thereto.

Referring to FIG. 28, a light emitting chip 101 is disposed on a firstlead electrode 161 disposed on the second support member 131. The lightemitting chip 101 may be bonded to the first lead electrode 161 using abonding material, and may be electrically connected to the first andsecond lead electrodes 161 and 163.

Although a case where the light emitting chip 101 is a vertical typechip has been illustrated as an example, the light emitting chip 101 maybe a horizontal type chip, but the present disclosure is not limitedthereto. Also, the light emitting chip 101 may be mounted in a flip-chipmanner, but the present disclosure is not limited thereto.

A fluorescent substance layer or a light transmission layer may bedisposed on the light emitting chip 101, and a reflecting member may bedisposed at the circumference of the light emitting chip 101. However,the present disclosure is not limited thereto.

FIG. 29 is a side sectional view showing an example of a horizontal typelight emitting chip according to an embodiment.

Referring to FIG. 29, the light emitting chip includes a substrate 311,a buffer layer 312, a light emitting structure 310, a first electrode316, and a second electrode 317. The substrate 311 includes a substratemade of a light transmissive or non-light transmissive material. Also,the substrate 311 includes a conductive or insulative substrate.

The buffer layer 312 reduces a difference in lattice constant betweenmaterials of the substrate 311 and the light emitting structure 310, andmay be formed of a nitride semiconductor. A nitride semiconductor layerundoped with a dopant may be further formed between the buffer layer 312and the light emitting structure 310, thereby improving crystal quality.

The light emitting structure 310 includes a first conductivesemiconductor layer 313, an active layer 314, and a second conductivesemiconductor layer 315.

The first conductivity type semiconductor layer 313 is implemented usinga Group III-V compound semiconductor. The first conductive semiconductorlayer 313 includes a semiconductor doped with a first conductive dopant,e.g., a compositional formula of In_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1,0≦x+y≦1). The first conductive semiconductor layer 313 may include astack structure of layers including at least one of compoundsemiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN,AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. The first conductivesemiconductor layer 313 is an n-type semiconductor layer, and the firstconductive dopant may include, as an n-type dopant, Si, Ge, Sn, Se, andTe.

A first clad layer may be formed between the first conductivesemiconductor layer 313 and the active layer 314. The first clad layermay be formed of a GaN-based semiconductor, and the bandgap of the firstclad layer may be formed equal to or greater than that of the activelayer 314. The first clad layer is formed of a first conductive type,and functions to restrain carriers.

The active layer 314 is disposed on the first conductive semiconductorlayer 313, and selectively includes a single quantum well structure, amultiple quantum well (MQW) structure, a quantum wire structure or aquantum dot structure. The active layer 314 includes a period of a welllayer and a barrier layer. The well layer may include a compositionalformula of In_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1), and thebarrier layer may include a compositional formula ofIn_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1). For example, thewell/barrier layers may repeat with the periodicity of one or more byusing a stack structure of InGaN/GaN, AlGaN/GaN, InGaN/AlGaN,InGaN/InGaN, InAlGaN/AlGaN, or InAlGaN/InAlGaN. The barrier layer may beformed of a semiconductor material having a bandgap higher than that ofthe well layer.

The second conductive semiconductor layer 315 is formed on the activelayer 314. The second conductive semiconductor layer 315 includes asemiconductor doped with a second conductive dopant, e.g., acompositional formula of In_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1,0≦x+y≦1). The second conductive semiconductor layer 315 may be made ofany one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN,InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. The secondconductive semiconductor layer 315 is a p-type semiconductor layer, andthe second conductive dopant may include, as a p-type dopant, Mg, Zn,Ca, Sr, and Ba.

The second conductive semiconductor layer 315 may include a superlatticestructure, and the superlattice structure may include a superlatticestructure of InGaN/GaN or AlGaN/GaN. The superlattice structure of thesecond conductive semiconductor layer 315 diffuses a current included inan abnormal voltage, to protect the active layer 314.

Further, a conductive type of the light emitting structure 310 may beinversely disposed. For example, the first conductive semiconductorlayer 313 may be prepared as the p type semiconductor layer, and thesecond conductive semiconductor layer 315 may be prepared as the n typesemiconductor layer. In addition, a first conductive semiconductor layerhaving polarity opposite to the second conductive type may be furtherdisposed on the second conductive semiconductor layer 315.

The light emitting structure 310 may have one of an n-p junctionstructure, a p-n junction structure, an n-p-n junction structure, and ap-n-p junction structure. Here, the p is a p type semiconductor layer,the n is an n type semiconductor layer, and the “-” denotes a structurethat a p type semiconductor layer and an n type semiconductor layer makedirect or indirect contact with each other. Hereinafter, for convenienceof description, the uppermost layer of the light emitting structure 310will be described as the second conductive semiconductor layer 315.

The first electrode 316 is disposed on the first conductivesemiconductor layer 313. The second electrode 317 having a currentdiffusion layer is disposed on the second conductive semiconductor layer315.

FIG. 30 is a view showing another example of the light emitting chipaccording to the embodiment. In FIG. 30, descriptions of portionsidentical to those of FIG. 29 are omitted and will be briefly described.

Referring to FIG. 30, in a vertical type light emitting chip, a contactlayer 321 is formed under a light emitting structure 310, and areflective layer 324 is formed under the contact layer 321. A supportmember 325 is formed under the reflective layer 324, and a protectivelayer 323 may be formed at circumferences of the reflective layer 324and the light emitting structure 310.

The light emitting chip may be formed by forming the contact layer 321and the protective layer 323, the reflective layer 324, and the supportmember 325 under a second conductive semiconductor layer 315 and thenremoving a growth substrate.

The contact layer 321 comes in ohmic contact with a bottom layer of thelight emitting structure 310, e.g., the second conductive semiconductorlayer 315. A material of the contact layer 321 may be selected from ametal oxide material, a metal nitride material, an insulative material,and a conductive material. For example, the material of the contactlayer 321 may be formed of a material selected from the group consistingof indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tinoxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zincoxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide(AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), Ag, Ni, Al,Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and the selective combinationthereof. Further, the material of the contact layer 321 may be formed ina multiple layer using the above metal and a light-transmissiveconductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, and ATO.For example, the material of the contact layer 321 may be stacked in astructure such as IZO/Ni, AZO/Ag, IZO/Ag/Ni, or AZO/Ag/Ni. A layer forblocking a current to correspond to an electrode 316 may be furtherformed inside the contact layer 321.

The protective layer 323 may be selectively formed of a metal oxidematerial or an insulative material. For example, the protective layermay be formed of one selected from indium tin oxide (ITO), indium zincoxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide(IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide(IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), galliumzinc oxide (GZO) , SiO₂, SiO_(x), SiO_(x)N_(y), Si₃N₄, Al₂O₃, and TiO₂.The protective layer 323 may be formed using a sputtering technique or adeposition technique, and a metal such as the reflective electrode layer324 can prevent layers of the light emitting structure 310 from beingshort circuited.

The reflective layer 324 may be formed of a material, e.g., a materialselected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg,Zn, Pt, Au and Hf, and the selective combination thereof. The reflectivelayer 324 may be formed in a size larger than a width of the lightemitting structure 310, which can improve light reflection efficiency. Ametal layer for conjunction and a metal layer for thermal diffusion maybe further disposed between the reflective layer 324 and the supportmember 325, but the present disclosure is not limited thereto.

The support member 325 is a base substrate, and may be formed of a metalsuch as copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo) orcopper-tungsten (Cu—W) or a carrier wafer (e.g., Si, Ge, GaAs, ZnO,SiC). A conjunction layer may be further formed between the supportmember 325 and the reflective layer 324. The conjunction layer can allowtwo layers to be adhered to each other. The above-described lightemitting chip is and example, and is not limited to the above-describedcharacteristics. The light emitting chip may be selectively applied tothe embodiments of the light emitting device, but the present disclosureis not limited thereto.

The embodiments provide a light emitting device having a new heatdissipation structure. The embodiments provide a light emitting devicein which a second support member made of a ceramic material, on which alight emitting chip is disposed, is disposed in an opening of a firstsupport member made of a resin material. In the embodiments, metallayers are respectively disposed on top and bottom surfaces of a supportmember made of a ceramic material, on which a light emitting chip isdisposed, thereby improving heat dissipation efficiency. The embodimentsprovide a light emitting device having improved heat dissipationefficiency. In the embodiments, a support member made of a ceramicmaterial is disposed in an opening of a support member made of a resinmaterial, so that a light emitting device can have a slim thickness. Inthe embodiments, it is possible to improve the reliability of a lightemitting device and a lighting module having the same.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

What is claimed is:
 1. A light emitting device comprising: a firstsupport member having an opening; a second support member disposed inthe opening of the first support member; an adhesive member disposedbetween the first and second support members; a first lead electrodedisposed on the second support member; a second lead electrode disposedon at least one of the first and second support members; a lightemitting chip disposed on the first lead electrode, the light emittingchip being electrically connected to the second lead electrode; and aconductive layer disposed under the second support member, wherein thefirst support member comprises a resin material, the second supportmember comprises a ceramic material, and the first lead electrode isdisposed between the light emitting chip and the second support member.2. The light emitting device according to claim 1, wherein the adhesivemember comprises at least one of a first adhesive part disposed at a topedge portion of the second support member and a second adhesive partdisposed at a bottom edge portion of the second support member.
 3. Thelight emitting device according to claim 1, wherein the adhesive membercomprises at least one of a first adhesive part disposed at a top insideof the first support member and a second adhesive part disposed at abottom inside of the first support member.
 4. The light emitting deviceaccording to claim 1, wherein the top-view shape of the openingcomprises a circular shape or a polygonal shape, and the first supportmember and the adhesive member are disposed at the circumference of thesecond support member.
 5. The light emitting device according to claim1, wherein the first support member comprises a first resin layer, asecond resin layer disposed under the first resin layer, an adhesivelayer disposed between the first and second resin layers, a first metallayer disposed on the first resin layer, and a second metal layerdisposed under the second resin layer, and the adhesive layer isconnected to the adhesive member.
 6. The light emitting device accordingto claim 5, wherein the adhesive layer and the adhesive member comprisethe same material.
 7. The light emitting device according to claim 5,wherein the second support member comprises at least one of a thirdmetal layer disposed on a top surface thereof and a fourth metal layerdisposed on a bottom surface thereof, and the adhesive member isdisposed at the circumference of at least one of the third and fourthmetal layers.
 8. The light emitting device according to claim 7, whereinthe third metal layer comprises a plurality of electrode patterns, andis spaced apart from a top edge of the second support member.
 9. Thelight emitting device according to claim 2, wherein the second supportmember comprises a stepped recess at least one of the top edge and abottom edge thereof.
 10. The light emitting device according to claim 9,wherein at least one of the first and second adhesive parts of theadhesive member is disposed in the recess.
 11. The light emitting deviceaccording to claim 1, wherein the conductive layer is disposed under thefirst and second support members.
 12. The light emitting deviceaccording to claim 5, wherein the second support member has a thicknessthat is thinner than a thickness of the first support member and thickerthan the sum of thicknesses of the first and second resin layers. 13.The light emitting device according to claim 1, wherein the secondsupport member comprises at least one of aluminum nitride, siliconcarbide, alumina, zirconium oxide, silicon nitride, and boron nitride.14. The light emitting device according to claim 1, wherein the firstsupport member comprises at least one of a hole and a via hole therein.15. The light emitting device according to claim 1, comprising afluorescent substance layer disposed on the light emitting chip and areflecting member made of a resin material, which is disposed at thecircumference of the light emitting chip.
 16. A lighting modulecomprising: a first support member having an opening; a second supportmember disposed in the opening of the first support member; an adhesivemember disposed between the first and second support members; a firstlead electrode disposed on the second support member; a second leadelectrode disposed on at least one of the first and second supportmembers; a plurality of light emitting chips disposed on the first leadelectrode, the light emitting chips being electrically connected to thesecond lead electrode; a protective layer disposed on the first andsecond lead electrodes; and a conductive layer made of a metallicmaterial, the conductive layer being disposed under the first and secondsupport members, wherein the first support member comprises a resinmaterial, the second support member comprises a ceramic material, andthe plurality of light emitting chips are disposed between the firstlead electrode and the second support member.
 17. The lighting moduleaccording to claim 16, comprising a heat dissipation plate having aplurality of heat dissipation fins, which is disposed under theconductive layer.
 18. The lighting module according to claim 16, whereinthe plurality of light emitting chips are connected in series, andwherein the lighting module comprises: a fluorescent substance layerdisposed on the plurality of light emitting chips; and a reflectingmember made of a resin material, the reflecting member being disposed atthe circumference of the light emitting chips and the fluorescentsubstance layer.
 19. The lighting module according to claim 16, whereinthe adhesive member comprises a first adhesive part disposed at a topedge portion of the second support member and a second adhesive partdisposed at a bottom edge portion of the second support member.
 20. Thelighting module according to claim 19, wherein the second support membercomprises recesses in which the first and second adhesive parts aredisposed at top and bottom edges thereof, respectively.